| 摘要 |
In a semiconductor device a field effect transistor of either the lateral or vertical type has an island-shaped first region (1) which is bounded at the bottom by a first p-n junction (5) having a high breakdown voltage and laterally by a second p-n junction (6) having a low breakdown voltage. The first junction (5) is formed with an underlying second region (2) of opposite conductivity type to the first region (1) and can be reverse-biased by applying a voltage between the second region (2) and a contact region (4) which forms a non- rectifying contact with the region (1). The doping and thickness of the first region (1) are so small that, before breakdown at the second junction (6) occurs, the part of the region (1) situated between the second junction (6) and the contact region (4) is fully depleted by the depletion zone extending from the reverse-biased first junction (5). In Figure 2 this contact region (4) belongs to the drain electrode (D), but in other embodiments it belongs to the source electrode (S) or gate electrode (G). In Figure 2 the transistor has a junction gate (7) but in other embodiments it may have an insulated gate or a Schottky gate. Integrated complementary transistors each in accordance with the invention may be formed (Figure 3) using a double epitaxial layer structure for the first and second regions (1 and 2). <IMAGE> |
