| 摘要 |
An improved high power semiconductor device (80) and manufacturing method wherein one or more die (64-66) are assembled to one electrode (41) having a heat transfer face (42b) and additional insulated electrodes (47, 53), said electrode (41, 47, 53) having bent up (43, 49, 55) and bent over (50, 83; 44, 84; 56, 58) portions forming high current terminals (83, 84) and control terminals (56, 58) such that the current terminals (83, 84) and control terminals (56, 58) lie in different planes and such that terminal spacings (91, 93, 94, 95) satisfy Underwriters Laboratory recommendations. The die and electrode assembly (40) is partly encapsulated preferably in plastic (81). The current terminals (83, 84) are diagonally located to facilitate use of standard bus bar arrangements with different device orientations. Connection nuts (88) are movably retained to limit transfer of tightening torque to the plastic body (81). Choices of materials are described. |
