| 摘要 |
PURPOSE:To prevent an input signal from being deteriorated by forming an N<+> type second region to become one electrode on the first P-type region on an insulator region, applying a ground potential through a resistor R1 to the first region, and applying a power potential to the insulator region. CONSTITUTION:The first electrode 20 is connected through a resistor R1 to a ground terminal GND, the second electrode 21 is connected to an input terminal A, the third electrode 22 is connected to an output terminal B, the fourth electrode 23 is connected to a power terminal VCC, and a MOS capacity formed with the second region 17 as one electrode and with the electrode 22 as the other electrode is used as a coupling capacity. A ground potential is applied through the registor R1 to the first region 16, a power potential is applied through the resistor R2 to the parasitic resistor of an insulator region 15. A circuit has the terminals A, B, and a coupling capacity CC connected between the terminals A and B. A junction capacity CS1 of the regions 17, 16, a junction capacity CS2 of the regions 16, 15 and a junction capacity CS3 of the region 15 and the substrate 11 are formed between the region 17 and a substrate 11. |
