| 摘要 |
PURPOSE:To facilitate epitaxial growth, to control temperature distribution, and to make it possible to form a single crystal in a large area, by providing a reflection preventing film comprising a thin insulating layer so that most of laser light power is absorbed, and providing a grid shaped reflection preventing layer, which is continued from said region. CONSTITUTION:A thin silicon nitride film 41 is formed on the surface of a polycrystalline silicon layer 13 as a reflection preventing layer by a CVD method to the film thickness of 600-1,000 deg.C. A grid pattern is formed on the polycrystalline silicon layer 13 on an oxide film 12. When a semiconductor single crystal layer is formed on the oxide layer 12, continuously oscillated laser light 15 is projected on the polycrystalline silicon layer 13 at a constant power, and scanning is performed from an opening part 23 to the surface of the oxide film 12 along the direction of the grids of the silicon nitride film 41. At this time, epitaxial growth, which accepts the axial direction of the single crystal silicon substrate 11, is yielded. The growth proceeds to the region on the oxide film 12 accompanied by the scanning of the laser light 15. Because of the grid shaped silicon nitride film 41, approximately constant temperature distribution is yielded, and the crystal growth proceeds to the part under the grid pattern. |
