| 摘要 |
PURPOSE:To obtain a semiconductor device with the electrode being in ohmic- contact without deteriorating the characteristics of a semicondutor layer by directly coating the electrode with magnesium. CONSTITUTION:A gate insulating film 22 consisting of Si3N4, SiO2 or the like is laminated on N crystalline silicon 21 functioning as a gate, and a high-resistance amorphous silicon layer 23 as source-drain is laminated. Metallic magnesium is prepared directly on the surface of the amorphous silicon layer 23 through evaporation, and functions as a source electrode 24 and a drain electrode 25. Accordingly, the semiconductor device in which the electrodes are prepared directly to the high-resistance amorphous silicon layer 23 can be obtained without laminating an amorphous doping film of high impurity concentration at all. |
