| 摘要 |
The present invention relates to a MOS transistor structure with gate and drain contact of Schottky type and a particular method of fabricating such a structure. According to this method, a thin silica layer 2, a thin silicon nitride layer 3, a polycrystalline silicon layer 4, a thin silica layer 5 and a thin nitride layer 6 are formed successively on a silicon layer. Gate zones are etched, then the polycrystalline silicon 4 is oxidised sideways in zones 7. After this, the thin nitride and silica layers are removed, and a metal layer is deposited which is alloyed with, on the one hand the silicon of the substrate and, on the other hand with the polycrystalline silicon of the gate to form silicide layers 9 and 10. The distance d between the gate zone and the Schottky contacts of source and drain 9 can thus be minimised and adjusted in a chosen manner. <IMAGE> |
