发明名称 SEMICONDUCTOR SWITCH CIRCUIT
摘要 PURPOSE:To prevent the leakage of gate currents for controlling OFF to a path for principal currents during a period when the switch is turned OFF by setting up a first transistor with two collectors and second - fourth transistors of a conduction type complementary to the first transistor. CONSTITUTION:The first transistor 8 with two collectors and the second, third and fourth transistors 6, 7, 9 of the conduction type complementary to the first transistor are set up. The first collector of the first transistor 8 and the base of the second transistor 6 are connected, and the base of the first transistor and the collector of the second transistor 6 are connected, thus equivalently constituting the P-N-P-N type switch. The collector of the third transistor 7 is connected to the base of the second transistor 6, and the base of the third transistor 7 and the collector of the fourth transistor 9 are connected to the second collector of the first transistor 8.
申请公布号 JPS59108352(A) 申请公布日期 1984.06.22
申请号 JP19820217813 申请日期 1982.12.14
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 INABE YASUNOBU;KIMURA TADAKATSU
分类号 H01L29/744;H01L29/74;(IPC1-7):01L29/74 主分类号 H01L29/744
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