| 摘要 |
PURPOSE:To obstruct a short according to a pinhole, and to enhance yield of an FET by a method wherein a gate line insulating layer and a drain line are formed to be laminated in order on an insulating substrate, the laminate is immersed in an electrolyte in the laminated condition together with the substrate, a gate line is made to have positive electric potential, a negative electric potential electrode is immersed in the liquid, and the pinhole part is treated according to anodic oxidation. CONSTITUTION:An FET having a pinhole 8 is immersed in an electrolyte together with a substrate, a gate line X is connected to a positively electric potential terminal, while a negatively electric potential electrode is immersed in the electrolyte thereof, a current is flowed between the gate line X and a drain line Y through the pinhole 8, and the surface of the drain line Y is oxidized. At this case, oxidation advances from the near part to the pinhole 8 owing to resistance of the drain line Y, the pinhole 8 and the circumference thereof are covered finally with an insulator 9 generated according to oxidation, and insulation between the gate line X and the drain line Y can be attained. When oxidation is completed anodic, oxidation is stopped. When aluminum is used as the material of the drain line Y, the insulator 9 is constructed of alumina Al2O3. |
