| 摘要 |
PURPOSE:To obtain a solid-state image pickup element having a large aperture rate, good photoelectric converting efficiency and spectral characteristic and possible for high speed readout by taking over the principle of a hook structure SIT image sensor so as to attain the laminated type structure of the optical conductive film for the photoelectric converting section. CONSTITUTION:A photoelectric converting section 32, readout electrostatic induction transitor(SIT)33 and a PN junction section 34 are provided on an N type substrate 31. The photoelectric converting section 32 consists of a transparent electrode 35, photo conductive film 36 and a light shielding bottom electrode 37; and a readout SIT33 consists of a drain N<+> diffusion layer 39, source N<+> diffusion layer 42, gate P<+> diffusion layer 43 and a channel region 40. A PN junction section 34 consists of the drain N<+> diffusion layer 39 and a P<+> diffusion layer 38 provided therein in connection to a bottom electrode 37. When a potential of the bottom electrode 37 is increased by incident light, positive holes stored in the said P<+> diffusion layer 38 pass through the drain diffusion layer 39, and are discharged to the source 42 via the channel region 40 for attaining the reset operation. |
