发明名称 SEMICONDUCTOR RECTIFIER INSTRUMENT
摘要 <p>PURPOSE:To miniaturize and lighten the instrument and improve a radiating effect, and to reduce the calorific value of a frame spraying metallic layer by forming a flame spraying insulating layer and the flame spraying metallic layer to a radiating substrate, connecting and fixing rectifying devices of different polarity onto them and extracting a conductive electrode from the intermediate section of a distance between the rectifying devices. CONSTITUTION:Alumina is plasma flame-sprayed selectively to the surface of a roughened substrate 45 to form the insulator layer 46. Copper is plasma flame- sprayed selectively to the surfaces of the insulator layer 46 and the substrate 45 to form metallic layers 47, 48, 49, thus obtaining the radiating substrate 51 combining an electrode. For example, each anode of three diode elements 52, 53, 54 is brazed and fixed onto the metallic layer 48 and each cathode of three diodes 55, 56, 57 onto the metallic layer 47 respectively while one end of a cylindrical electrode 58 is brazed and fixed onto the metallic layer 47. The electrode extracting position of the cylindrical electrode 58 is determined to the intermediate section of distances among the rectifying devices 55-57 such as an intermediate section between the rectifying devices 55, 56 at that time.</p>
申请公布号 JPS59108340(A) 申请公布日期 1984.06.22
申请号 JP19820218553 申请日期 1982.12.14
申请人 TOSHIBA KK 发明人 YOTSUMOTO YOSHIHARU;KUBOTA ISAHIKO
分类号 H01L25/07 主分类号 H01L25/07
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