| 摘要 |
PURPOSE:To give energy lower than a blowout, and to treat a disconnection by irradiating energy beams of energy, through which a fuse film is not melted in an oxidizing atmosphere, and changing the film into an oxide film through oxidation. CONSTITUTION:A polycrystalline film 3 is a conductive polycrystalline silicon film to which a substance such as phosphorus is doped, and is formed on the upper surface of an insulating film 2 on a semiconductor substrate 1. When a spot of a CW (continuous wave) type argon laser is made to irradiated at a desired position from an upper section and oxygen gas is sprayed continuously, the temperature of a section to be irradiated is elevated 1,000-1,100 deg.C, the section is reacted with oxygen, and a silicon dioxide film 6 is formed to the section to be irradiated. The SiO2 film 6 reaches to the insulating film 2 of the bottom, is insulated electrically, and is brought to a disconnected state. |
