| 摘要 |
PURPOSE:To form the flat electrode wiring with no stepped difference section through etching by implanting oxygen or nitrogen ions to the exposed section of a first metallic thin-film while using a second thin-film, to which an electrode wiring pattern is formed, as a mask and changing the exposed section into an insulating thin-film. CONSTITUTION:An aluminum thin-film 2 as an electrode material is formed on a semiconductor base body 1, the electrode wiring pattern of photoresists 3 is formed on the thin-film 2 by using phototype process technique, and oxygen ions 5 are implanted onto the exposed aluminum thin-film 2 while using the pattern as the mask. It is preferable that the energy of the oxygen ions extends over a range in which ions are implanted to the whole film thickness of the aluminum thin-film 2. The photo-resists 3 are removed, and the base body is thermally treated in an atmosphere at 100-500 deg.C in order to combine the thin-film 2 and oxygen ion-implanted and form aluminum oxide. Accordingly, the flat electrode wiring in which wiring sections are formed by the aluminum thin-films 21 and other sections by aluminum oxide 6 can be formed. |
