| 摘要 |
An FET pellet 10 is combined with a special carrier (70, Figure 7) having a source pad 76, a drain pad 74, and first and second gate pads 78, 80 and another pad 82 to create a dual-gate FET with relatively high power handling capabilities; when conventionally combined with a carrier which contains source (S), gate (G) and drain (D) electrodes the combination provides a single- gate power FET. In the dual-gate FET some of the conventionally drain electrodes (D) are connected to the source pad 76 as source electrodes S1, some of the gate electrodes are connected to the first gate pad 78 as first gate G1 and some of the gate electrodes are connected to the second gate page 80 as second gates G2. Some conventionally source electrodes (S) are connected together by a pad 82 as interconnected drain D1 and source S2 electrodes. Some conventionally source electrodes (S) retain the characteristics of source electrodes S2 and other conventionally source electrodes (S) have the characteristics of drain electrodes D1. <IMAGE> |
