| 摘要 |
PURPOSE:To increase the degree of circuit integration by forming a layer on which a channel region is formed by a semiconductor the same type as the layer formed with a gate region and a layer with lower impurity density than that of the gate region. CONSTITUTION:A channel region 112 made of a p<-> layer is formed on an n<+> substrate 110 and a pair of p<+> gate regions 114 are formed on the upper face of the region. A source region 116 is provided between the gate regions 114 and a cell corresponding to one picture element is formed by the combination of the source region 116 and the gate region 114. A readout address circuit 130 is connected respectively to one set of gate electrodes 124, and a readout pulse is applied sequentially to each cell. Further, the source electrode 122 is connected to the drain of a switching transistor 140, which is driven by a pulse voltage from a video line selecting circuit 132 so as to perform the readout of each cell. |
