SOLID-STATE IMAGE PICKUP ELEMENT

摘要

PURPOSE:To improve the photosensitivity remarkably by storing charges caused by light radiation to a sub-electrode of an electrostatic induction transistor and reading out it as a current change between main electrodes so as to amplify the optical charge. CONSTITUTION:A drain 25 being the 2nd main electrode of a transistor SIT, a channel region 26 and a source 27 being the 1st main electrode are formed on the surface of a substrate 24. A p<+> region 28 surrounding the source 27 of n<+> region in the shape of rectangle and circle is formed to constitute a gate being a sub-region of the SIT. Further, a p<+> region is formed in the source 27 and acts like an electrode of a switching diode. A reset electrode 35 is provided at a part opposite to a p<+> gate diffusion region 28 being the sub-electrode and a reset selecting line 36 is connected thereto. This subelectrode 28 is floated electrically to the reset electrode 35 and a capacitor is formed between the sub- electrode 28 and the reset electrode 35.