| 摘要 |
PURPOSE:To improve yield on manufacture and reliability by irradiating a visible light when there is a defective position in the photoelectric conversion device, detecting the position, irradiating trimming pulse beams of coaxial beams, and instantaneously evaporating and erasing an electrode and a semiconductor at the defective position. CONSTITUTION:A light-transmitting first electrode 3 is attached onto a light- transmitting glass substrate 2, a hydrogen added nonsingular crystal semiconductor layer 4 with a P-N or P-I-N or hetero-junction is formed onto the electrode 3, and the layer 4 is coated with an Al second electrode 5. The visible radiation, such as He-Ne Ar or the like is irradiated on the exposed surface side of the substrate 2, and the defective position of the photoelectric conversion device is inspected. When the defective position 14 where the electrodes 3 and 4 are in contact is discovered at that time, a YAG laser 12, a spot diameter thereof is made 50mumphi, is irradiated similarly from the exposed surface side of the substrate 2, and the layer 4 and the electrode 5 at the defective position 14 are burnt off instantaneously and evaporated. The whole surface is coated with a passivation film made of Si3N4, etc. while burying the defective position. |
