| 摘要 |
PURPOSE:To obtain the device of high conversion efficiency by effectively utilizing reflected light by setting up an amorphous semiconductor for generating photovoltage with a P-N junction on a light-transmitting substrate through a first electrode consisting of a light-transmitting conductive film and forming a second electrode consisting of a light-transmitting conductive film, thickness thereof is prescribed, and a metallic film for reflection made of Al, to which Si is added, on the amorphous semiconductor. CONSTITUTION:The light-transmitting conductive film mainly comprising tin oxide is applied onto the light-transmitting substrate 1 made of glass, etc. and used as the first electrode 2, and the amorphous semiconductor consisting of a P type, an I type and an N type is formed onto the first electrode and used as a P-I-N layer 3. The light-transmitting conductive film 5 in 700-2,000Angstrom thickness and the Al film 6 to which Si is added are laminated and applied onto the layer 3, and used as the second electrode. Accordingly, the film 6 of excellent reflection characteristics is formed additionally besides the film 5, the reflected beams 10' of beams 10 projected to the exposed surface of the substrate 1 are increased, and conversion efficiency is improved. |
