PHOTOVOLTAIC DEVICE

摘要

A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10-8 ( OMEGA xcm)-1 at 20 DEG C. in the layer positioned on the side opposite to incidence of light. The photovoltaic device has an improved efficiency.