| 摘要 |
PURPOSE:To make is possible to obtain an alignment mark which is high in both positioning accuracy and S/N, by simultaneously forming an element-forming pattern and an alignment mark-forming pattern on an insulating film, and forming an alignment mark by the use of the latter pattern. CONSTITUTION:An emitter-forming oxide film 11 is deposited on a substrate 1. The film 11 is coated with a resist film 12, on which an emitter hole pattern 13A and a mark pattern 14A are simultaneously formed. The film 11 is etched to form emitter holes 13B and a mark pattern 14B, and the resist film 12 is removed. The oxide film 11 is coated with a shielding film 15. The portion of the film 15 in a mark area part 16 is removed. With the oxide film in the mark area part employed as a mask, etching is carried out to form a stepped mark 17. The film 15 is removed, thereby to complete an alignment mark. By this manufacturing method, the positioning accuracy between the mark-forming pattern and the element-forming pattern is extremely high. In addition, it is possible to obtain an alignment mark with a large S/N in the electron-beam or optical aligner system. |
