| 摘要 |
A thin film, field effect transistor device of V-mos-like construction having a source region, a drain region, a gate insulator 80, a thin film 76 of deposited amorphous alloy including at least silicon and fluorine coupled to the source region, the drain region and the gate insulator and a gate electrode 84 in contact with the gate insulator. Preferably, the amorphous alloy also contains hydrogen and is a -Sia:Fb:Hc, where a is between 80 and 98 atomic percent, b is between 1 and 10 atomic percent and c is between 1 and 10 atomic percent. The field effect transistor can be deposited on various substrates with an insulator material between the active regions of the thin film, field effect transistor and a conducting substrate. <IMAGE> |
