Gate turn-off thyristor.

摘要

A plurality of strip-shaped emitter layers (5) on the cathode side are radially arranged on one main surface of the semiconductor substrate while forming a plurality of rings. A gate electrode (8) is in ohmic contact with a part of a base layer (4) which surrounds and is adjacent to each of said emitter layers on the cathode side. Between rings formed by said emitter layers on the cathode side, a ring-shaped gate collecting electrode (80) is provided to be connected to said gate electrode. At this time, said gate collecting electrode is provided at such a position as to balance the potential differences produced by gate currents respectively corresponding to side and outside of said gate collecting electrode.