| 摘要 |
PURPOSE:To use the same electrode even when the conductivity types of electrode forming regions are different and thereby the manufacturing process can be simplified by using an electrode material mainly consisting of Au containing an impurity of the conductivity type opposing to that of impurity for the mixed crystal compound semiconductor consisting of In, Ga, As and P where a high concentration impurity is diffused. CONSTITUTION:An undoped N type In0.53Ga0.47As layer 12 formed by liquid phase epitaxial growth method is provided on a Fe doped semi-insulating substrate 11. A carrier concentration of the In0.53Ga0.47As layer 12 is 5-20X10<15>/ cm<3>, and the P type high concentration Zn diffusion region 13a which forms the P-N junction of PIN photo diode and the Zn diffusion region 13b which will become the gate of JFET are formed at a part thereof. As the electrode 14 of such semiconductor element, a material containing an N type impurity for the In0.53Ga0.47As and mainly consisting of Au is used. |
