| 摘要 |
PURPOSE:To obtain a wiring structure which assures high density wiring by forming a first and a second polymer resins in substantially the same chemical composition and selecting the width of lower wiring conductor to the dimension almost the same or smaller than that of the opening. CONSTITUTION:PIQ prepolymer liquid is rotatingly applied as a first polymer resin insulating film 2 on a substrate 1, the thermosetting PIQ film is formed, aluminum is vacuum deposited thereon and it is photoetched. Thereby, a lower wiring conductor 3 in the film thickness of 1mum and width of 4mum is formed. Next, the PIQ prepolymer liquid is rotatingly applied and it is half-hardened. Thereafter, a negative type photo resist is applied and it is exposed and developed in order to form an opening pattern. Then, etching is carried out with an opening size of 4mum square, using the alcohol solution containing tetramethylammoniumhydroxide as the etchant which etches only the half-hardened PIQ but does not etch the hardened PIQ. Thereafter, the final baking is carried out, aluminum is vacuum deposited as the upper wiring conductor and the upper layer wiring conductor 6 is formed by the photo etching. |
