| 摘要 |
A method for producing a semiconductor device provided with a fuse including the steps of forming a fuse layer on an insulating layer formed on a semiconductor substrate, forming an interrupting layer covering the fuse layer and the insulating layer, forming an insulating protective layer covering the interrupting layer, selectively etching the protective layer, so as to form a window, with a suitable etchant which does not etch the interrupting layer, and etching the exposed interrupting layer to complete the window by which a portion of the the fuse layer and a portion of the insulating layer are exposed. The insulating layer is not removed so that the reliability of the semiconductor device will not deteriorate.
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