Field effect transistor with a high cut-off frequency

摘要

The invention relates to semiconductor devices of the transistor type operating at high frequencies. In order to make the drain/source current characteristic linear with the voltage applied to the grid and in order to retain a construction technology which is compatible with existing technologies the invention provides an AlxGa1-xAs layer between the substrate and the active GaAs layer. A supplementary, highly doped, GaAs layer and a supplementary semi-insulating AlxGa1-xAs layer modify the source and drain access resistances and the output resistance. Application to devices operating at ultra-high frequencies.