| 摘要 |
PURPOSE:To prevent the discharge breakdown of a thin film transistor and an electrode wiring generated at the time of ion implantation at a high concentration by a method wherein an electrode material on a gate film is photoetched, and a conductive member is deposited to an arbitrary thickness, thereafter ion implantation is performed from above the conductive member. CONSTITUTION:After depositing polycrystalline Si on an insulation substrate 17, the transistor region 18 is formed by photoetching method. Next, after forming a gate oxide film 19 by thermal oxidation, polycrystalline Si 20 is immediately deposited on the gate oxide film 19 as the gate electrode material. Then, the electrode wiring 21 is formed by etching the polycrystalline Si by photoetching method, further polycrystalline Si 22 is deposited on the main surface of the substrate, thereafter phosphorus thermal diffusion is performed, thus obtaining the polycrystalline Si having a seat resistance value of about 30OMEGA/square. Successively, phosphorus implantation is performed by using an ion implantation device, and then the polycrystalline Si is thermally oxidized, resulting in the formation into an insulation film. Aluminum is deposited by sputtering as the wiring material of a drain and a source part, and an aluminum wiring 23 is formed by photoetching method. |
