| 摘要 |
PURPOSE:To correct the fault and defect easily in a short time by partially heating the position of the fault and defect of the photo-mask by laser beams and vapor-phase growing metal chromiun at the position. CONSTITUTION:A gas 6 required for vapor-phase growing metal chromium is fed into a chamber 5, and laser beam 7 are irradiated to the arbitrary surface position of the photo-mask 3 set up. When laser beams 7 are irradiated to the broken defect 4 and the broken defect 4 and a section in the vicinity of the defect are heated at 600 deg.C or more, the vapor-phase growth gas 6 in the chamber 5 reacts, metal chromium 8 vapor-phase grows at the position of the fault and defect 4, which is repaired, and the defect as the photo-mask 3 is corrected. |
