| 摘要 |
PURPOSE:To flatten the surface of an SiO2 film completely,and to form the multilayer wiring of high reliability without increasing the number of processes by forming the SiO2 film through an RF sputtering method, in which RF bias is applied, as an inter-layer insulating film. CONSTITUTION:Al wiring layers 3 as first layers are formed on a wiring film 2. SiO2 is sputtered to the wiring layers 3 while applying RF bias voltage to a semiconductor substrate 1 through an RF magnetron sputtering method, and the sputtered SiO2 film 8 in film thickness of twice or quadruple as large as film thickness of the first layer Al wiring 3 is formed. Film thickness of 20-50% of the surface section of the SiO2 film 8 is etched through a plasma etching method, etc. in the whole surface, and the completely flattened sputtered SiO2 film 8' is formed. An Al film is formed, and Al wiring layers 9 as second layers are formed through etching. |
