| 摘要 |
PURPOSE:To ensure the stable compensation of operation with no effect of a junction leakage current by providing a discharging MOS transistor to each address line and then discharging the transistor at a high speed after turning it on for a fixed period as soon as a precharge period starts. CONSTITUTION:An MOS-TRQ6 is turned on with a signal of phi3=1 when an active period shifts to a precharge period, and an address line P is instantaneously set at an earth potential. Therefore no effect of a TRQ4 is given. This can decrease greatly a period T' from the discharge starting time point t4 of the line P through its end time point t5. As a result, a transfer gate of a memory cell can be quickly closed to enable the precharge of a bit line R at an early time point as well as a high-speed operation. |
