| 摘要 |
PURPOSE:To reduce the electrical resistance of the contact part between an N-type layer and a backside electrode and avoid deterioration of initial characteristics by a method wherein a P-type layer, an I-type layer, the N-type layer and the backside electrode are formed on a transparent conductive film provided on a transparent insulating substrate and the impurity concentration in the N-type layer is lower in the I-type layer side and higher in the backside electrode side. CONSTITUTION:After a transparent conductive film 2 is formed on a glass substrate 1 of a photovoltaic device, a P-type amorphous Si layer 3, an I-type amorphous Si layer 4 and an N-type amorphous Si layer 7, which is composed of the 1st and 2nd N-type layers 7a and 7b, are successively laminated on the conductive film 2. Further, a backside electrode 6 made of Al-Ti or the like is formed on the N-type layer 7. The impurity concentration of the N-type layer 7 is so controlled as to be lowest in the 1st N-type layer 7a of the I-type layer 4 side and highest in the 2nd N-type layer 7b of the backside electrode 6 side. Then the electrical resistance of the contact part between the N-type layer 7 and the backside electrode 6 is reduced to avoid optical deterioration and deterioration of initial characteristics of the device. |
