| 摘要 |
PURPOSE:To microminiaturize an element by accelerating and restricting the decrease in the short channel effect and the withstand voltage of a punch through by decreasing the resistance of source and drain regions. CONSTITUTION:The second conductive type semiconductor layer 10 and source 13 and drain region 14 formed of inter-gold layer semiconductor compound film on the layer 10 are formed in space on a plurality of insular region surfaces which are isolated via the element isolating region 3 of the first conductive semiconductor substrate 1, a gate insulating film 15 is formed between the source and drain regions on the substrate, and a gate electrode 17 is formed on the film 15. |
