发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE:To obtain a long life plasma apparatus which generates little dust by covering the surface of electrodes provided within the reaction chamber with a metal or metal oxide which is thermally stable and assures easy vaporization of halogenide. CONSTITUTION:An object to be processed 5 is placed facing the electrode opposing to the electrode 5 in the parallel flat type reactive ion etching apparatus. At least the surface of both electrodes is made of Mo, W, Ti or the oxide of them, generation of dust can be reduced and manufacturing accuracy can be improved in comparison with the existing carbon or polytetrafluoroethylene.
申请公布号 JPS59103345(A) 申请公布日期 1984.06.14
申请号 JP19820213002 申请日期 1982.12.03
申请人 MITSUBISHI DENKI KK 发明人 NAGATA KAZUSHI
分类号 H01L21/31;C23C16/509;H01L21/302;H01L21/3065 主分类号 H01L21/31
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