| 摘要 |
PURPOSE:To control the diameter of a single crystal growing by Czochralski (CZ) process, easily, by determining the electrical resistance between the seed crystal and the molten raw material, thereby detecting the variation in the diameter of the single crystal. CONSTITUTION:The electrical resistance between the seed crystal 4 and the molten raw material 3 is determined continuously using an electric cell or the thermoelectromotive force in the circuit as the electrical source 11 of the circuit. The variation of the diameter of the single crystal pulled by CZ process can be detected by the variation of the electrical resistance. Consequently, the diameter of the single crystal can be controlled by a simple method. |
