| 摘要 |
PURPOSE:To enable efficient gettering by bumping discharging plasma of predetermined gas of halogen group against selective parts except an element forming region to form crystal faults in high density. CONSTITUTION:A wafer is cleansed enough and is purified by removing residual organic substance or heavy metals on its surface. Next, the wafer is put in the plasma of CXyY4-y gas (e.g. CF4, CF3Br) wherein X and Y are halogen elements and y<4, and plurality of crystal faults are introduced into selective parts of the wafer. By heat treatment following that, heavy metals or minute faults inside the wafer are gathered and gettering brings its effect. This method enables to do gettering in much cleaner condition than that in the conventional methods as well as to do gettering during an arbitrary process of the manufacture. In addition, the gettering is made on the same plane as an element forming plane so that plurality of wafers arranged in order can be subjected to gettering, resulting in high efficiency. |
