| 摘要 |
PURPOSE:To contrive improvement in characteristics of the titled semiconductor device by a method wherein an insulating film is provided between at least one of the source and drain located on an IGFET and a substrate. CONSTITUTION:Insulating films 201 and 202 such as SiO2 and the like are interposed between a P type Si substrate and an N type source and drain layer. According to this constitution, the capacitance between the source-drain and the substrate is lowered, and the leak current generating between them is also reduced. Besides, the punch-through withstand voltage of the device is increased, the parasitic bipolar transistor effect which is a short-channel effect can also be suppressed, and no deterioration is generated on the other characteristics. |
