| 摘要 |
PURPOSE:To obtain fast write speed even when the erase potential difference VE is zero or low by providing a number of collector electrodes that are mutually arranged in parallel and mutually insulated and isolated electrically at the effective area on a storage substrate. CONSTITUTION:A storage target 4 has mutually parallelly arranged the respective linear parts 6a and 7a of comb type first and second collector electrode 6 and 7 and exposes a linear storage surface 8 between them on a sapphire single cyrstal substrate 5. For signal write, as shown in the figures, different types of voltage are supplied by power supplies 29 and 32 so as to generate the potential difference within several V to several 100V in the collector electrodes 6 and 7. When the target 4 is bombarded selectively with an electron beam, generated secondary electrons and separated electrons of electron-positive hole pairs are moved toward the collector electrode 7 at high drift speed. As a result, even unless the erase potential difference is increased, write speed can be increased by generating the inter-collector potential difference at write. |
