| 摘要 |
PURPOSE:To prevent current from being concentrated to specific parts and suppress electromigration by a method wherein protruded parts of a source electrode wiring layer and a drain electrode wiring layer, whose base parts are enlarged, gear into each other and a gate electrode wiring layer is formed into zigzag shape. CONSTITUTION:A source electrode wiring layer 68 and a drain electrode wiring layer 70 are formed on a field insulating film 66 formed on a semiconductor substrate 52. A plurality of protruded parts 68a and 70a of the wiring layers 68 and 70, whose base parts are enlarged, gear into each other. A gate electrode wiring layer 56 is formed into zigzag shape. Current is applied to respective contacts 72 from an electric source pad through the wiring layer 68. At that time, larger current is applied to the wider base parts of the protruded part 68a than to the tip part. Therefore, the current is not concentrated and creation of electromigration phenomenon is avoided. The current applied to the contacts 72 flows from source regions 62 to the protruded parts 70a of the wiring layer 70 through drain regions 64 and is discharged into an output pads. Again at that time, larger current is applied to the base part of the protruded part 70a. |
