| 发明名称 |
A-TIN SEMICONDUCTOR DEVICE |
| 摘要 |
Epitaxial thin layers of alpha -tin are grown by vapor phase epitaxy upon lattice-matched substrates of InSb or CdTe by the thermal decomposition of stannane. By using substrates of smaller lattice constant it is possible to modify the process to deposit alpha -tin germanium alloys. |
| 申请公布号 |
GB2084396(B) |
申请公布日期 |
1984.06.13 |
| 申请号 |
GB19800030268 |
申请日期 |
1980.09.18 |
| 申请人 |
STANDARD TELEPHONES & CABLES LTD |
发明人 |
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| 分类号 |
H01L31/0264;C30B25/02;H01L21/205;H01L31/10;H01S5/00 |
主分类号 |
H01L31/0264 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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