Bipolar transistor integrated circuit and method for manufacturing.

摘要

A metal silicide contact to silicon devices which has broad application to almost all of the variety of silicon semiconductor devices is described. This contact with a substantial side component has particular advantage as the base contact for a bipolar transistor. Subsequent to the formation of the metal silicide contact layer (40) the surface of said metal silicide is thermally oxidized to form a silicon dioxide layer (42) thereover. This causes the silicide contact structure to sink into the silicon body to a depth at least as great as the emitter-base junction depth. The metal silicide contact (40) itself is contacted by contact elements (52) reaching from the surface through said silicon dioxide layer (42).