| 摘要 |
1,193,445. Photo-electric cell. THOMSONCSF. 24 July, 1967 [5 Aug., 1966], No. 33981/67. Heading H1K. [Also in Division G1] In an infra-red radiation measuring system comprising a doped semi-conductor body 2, Fig. 1, having a face 20 for receiving radiation and an insulating layer 3 on the opposite face, and in which a constant voltage is applied between contacts 184 on the two outer faces, the time-constant corresponding to the appearance of the inversion layer in the semi-conductor body near the insulating layer resulting from the voltage application, is measured to indicate the incident flux. The semi-conductor may be crystalline tellurium with a layer of tellurium oxide as the insulant, and gold vapour deposit electrodes, and may be operated at a temperature of 77‹ K. The detector 22, Fig. 3, is energized by H.F. from a generator 7 stepped by the output of a step generator 9, and the rise time of the modulated carrier at the beginning of a step is determined from an oscilloscope display. |
