Light-activated bi-directional thyristor.

摘要

57 A light-activated bi-directional thyristor of a planar structure having P type base layers (12, 19) for first and second thyristors (T1, T2) in a light receiving section (20), the P type base layers being separated from each other by an N type base layer (11). An N type emitter layer (22) is formed at that part of the P type base layer for the second thyristor which is located on the side of the light receiving section. A first auxiliary electrode (23) is laminated to the N type emitter layer to form an amplifying gate section. A second auxiliary electrode (24) is formed on the P type base layer (13) which is located opposite the light receiving section. On-current of the amplifying gate section is supplied to a shorted emitter (13a) in the second thyristor, through a connector (26) for electrically connecting the first and second auxiliary electrodes.