Multiple meltback procedure for LPE growth on InP

摘要

A multiple meltback procedure is described for removing gross contaminants and thermal degradation from InP-containing surfaces. Prior to LPE growth on an InP substrate, the substrate surface is brought into contact briefly ( APPROXLESS 1 sec) with an essentially pure In melt and is then brought into contact with a slightly undersaturated In/P melt. A similar triple meltback procedure is described for use prior to LPE growth over a mesa (e.g., in the fabrication of buried heterostructures).