发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To prevent malfunction at write by providing a difference to each of data write start time to a memory cell so as to suppress the generation of an instant large current change at write. CONSTITUTION:Signal delay circuits 361-367 are connected in multistage and cascade, and signals PGM2-PGM8 delayed sequentially are obtained by giving a control signal PGM to the delay circuit 361, and the signal PGM and the PGM2-PGM8 are given respectively to write control circuits 351-358. Since the fall time is delayed sequentially in the signals PGM2-PGM8 to the falling of the signal PGM, a difference is given to each of the write start time in writing a data by the control circuits 351-358. Thus, a current never starts flowing from a high voltage Vp at the same time at plural bits, thereby avoiding an instantaneous larger change in the write current. As a result, the generation of noise on the Vp power supply or a VS line is prevented.</p>
申请公布号 JPS59101095(A) 申请公布日期 1984.06.11
申请号 JP19820209051 申请日期 1982.11.29
申请人 TOSHIBA KK 发明人 IWAHASHI HIROSHI;ASANO MASAMICHI
分类号 G11C16/02;G11C17/00;(IPC1-7):11C17/00 主分类号 G11C16/02
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