发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To obtain an element with good reproducibility by one crystal growth, by forming a pattern on a substrate crystal surface in a phased array laser by lithography. CONSTITUTION:Convex type stripes 2 having interconnecting parts 3 are formed on the surface of a substrate crystal for laser. When the laser having an ordinary double heterostructure is grown on the substrate by using said substrate, the shape of the convex parts is copied to an active layer 31. When clad layers 21 and 41 are grown, the crystal surface after the growth of a gap layer 51 becomes flat. When Zn diffused electrode regions 61, which excite the stripe regions 2, are provided, the laser light is guided by the effective refractive index difference caused by the steps in the active layer 31. The phases of the laser light beams in all the stripes are synchronized through the interconnecting parts 3.
申请公布号 JPS59100583(A) 申请公布日期 1984.06.09
申请号 JP19820209419 申请日期 1982.12.01
申请人 HITACHI SEISAKUSHO KK 发明人 KURODA TAKAROU;KAJIMURA TAKASHI;KASHIWADA YASUTOSHI;KAYANE NAOKI;OOUCHI HIROBUMI
分类号 H01S5/00;H01S5/40 主分类号 H01S5/00
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