| 摘要 |
PURPOSE:To manufacture a semiconductor device, which is hard to be affected by a surface level, by forming phosphorus diffused regions, which performs getter action for impurities and crystal defects in a base region. CONSTITUTION:An opening part is formed in an SiO2 film. A P type region 3 as a first diffused region is formed through said opening part. An annular hole is provided in an SiO2 film 8 of the film 2 and phosphorus regions 9 are formed in the region 3 through said hole. A hole is provided in the SiO2 film 8 in the surface of the region 3, and an N type region 4 is formed as a second diffused region through said hole. Thus the regions 9 are formed in a base region. Therefore, a getter effect, by which impurities including heavy metals, a crystal defect layer, and the like in the base region are attracted to the large extent in a heat treatment process, can be observed conspicuously. |
