| 摘要 |
PURPOSE:To prevent the cracking of a wafer, which occurs during the manufacturing processes and to prevent the decrease in a yield rate, by forming mesa grooves on the wafer except the peripheral edge of the wafer. CONSTITUTION:Thermally oxidized films 3 are formed on both surfaces of a large area N type silicon wafer 1. Then, one oxidized film is removed. P type impurities are diffused and a P<+> region is formed. Then a P-N junction 2 is formed. The oxidized film on the P<+> region on the wafer is divided into elements. At this time, windows are selectively opened in the oxidized film, which is deposited on the parts located at the surrounding parts of the elements. Mesa grooves 7 are formed by chemical etching. At this time, an end 7a of each mesa groove 7 is terminated in front of the peripheral edge of the wafer 1. Then, the cracking of the wafer, which occurs during the manufacturing processes, can be prevented, and the yield rate is improved. Handling of the wafer also becomes easy. |
