发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To equalize the turn off time of each cathode-emitter in a substrate by a method wherein the width of cathode-emitter layer is reduced in proportion to the distance from the connecting point of a gate lead to a gate electrode. CONSTITUTION:Making a practical application of the fact that a turn off time may be shortened by reducing the size of a cathode emitter, the length of all cathode emitters of GTO is equalized while the width thereof is reduced in proportion to the distance from the connecting point of leads 8(81, 82). By means of properly changing the size of cathode emitters in this way, the negative bias of the cathode emitters at the point distant from the connecting point of the lead 8 is reduced, however the width of cathode emitters is proportionally reduced to make turning off easier. Resultantly all cathode emitters may be simultaneously turned off. Making a practical application of such a constitution to a transistor with multiple emitters, a base electrode opposing to a gate electrode may be made effective.
申请公布号 JPS5999769(A) 申请公布日期 1984.06.08
申请号 JP19820209607 申请日期 1982.11.30
申请人 TOSHIBA KK 发明人 TAKIGAMI KATSUHIKO;AZUMA MINORU;ASAKA MASAYUKI;OKABE KATSUO
分类号 H01L29/73;H01L21/331;H01L29/08;H01L29/74;H01L29/744 主分类号 H01L29/73
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