THIN FILM FIELD EFFECT TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To make the contact reliable eliminating the overlap parasitic capacitance of electrode by a method wherein a source electrode and a drain electrode partly overlapped and coming into ohmic contact are provided on an insulating substrate selectively coated with a semiconductor film while an N type semiconductor layer including V group impurity is laid between the electrodes and the semiconductor film at this time. CONSTITUTION:A channel forming part of an insulating substrate 11 is selectively coated with a semiconductor layer 18 and an N type semiconductor layer 19 including V group impurity is formed on the surface of both ends to make an ohmic contact favorable. Next both sides of a layer 14 and the layer 19 are coated with a source electrode 12 and a drain electrode 13 to be covered with a lift off material 17 and then overall surface is laminated with a semiconductor layer 14, a gate insulating layer 15 and a gate electrode 16 to complete the formation. Later, the laminated layers deposited on the liftoff material 17 are removed together with said material 17 to make gate, source and drain electrodes selfmatch producing an FET with almost no parasitic capacitance.