| 摘要 |
<p>PURPOSE:To obtain the resin sealed type semiconductor device of excellent dampproof property and electric characteristics at a high temperatue by a method wherein a composition in which an epoxy resin hardener, having two or more of phenolic hydroxyl groups in a molecule, a polysulfide polymer and an organic phosphine compound are mixed in dissolved state, is used. CONSTITUTION:Phenol novolac resin is mixed, as a hardener, in novolac type epoxy resin having epoxy equivalent of 170-300, said phenolic hydroxyl group base and the epoxy resin are mixed in the epoxy base ratio of 0.5-1.5 or thereabout. Polysulfide polymer [H(S-R-S)nH, n>2] containing alkyl, alkyl ether and alkyl formar (R), which is concretely poly (diethylfomalin) disulphide (average n is 5-50), of 1-30wt% for the epoxy resin is added, and besides, an organic phosphine compound of 0.01-5wt% for the total quantity of the epoxy resin and the hardener is added, hardening is accelerated and an inorganic filler is added if necessary. When the semiconductor is sealed using the resin of this composition, a sealed device of dampproof having no lead at a high temperature can be obtained.</p> |
