| 摘要 |
PURPOSE:To manufacture an FET with short channel length hard to punch- through by a method wherein a groove is provided between source-drain layers on the surface of an Si substrate deeper than those layers. CONSTITUTION:A P<+> channel stopper 103 is separated by a field oxide film 102 on a P type Si substrate 101 which is provided with a shallow N<+> layer 104 and covered with an SiO2 film 105. The N<+> layer 104 is separated by a U shaped groove 106 selectively etched to form a source 107 and a drain 108. A gate oxide film 109 is formed on the surface of the groove 106 and an Si gate electrode 110 is formed to be covered with an SiO2 film 111. Finally other grooves 112, 113 are selectively opened to provide them with wirings 114, 114' for completion. Source-drain gate electrodes are formed by selfmatching and a channel region 115 underneath the source-drain further makes punch-through more difficult with less electrode capacity due to existence of the oxide thick film 105. |
